The III-N research team has more than 10 years of experience in Gallium Nitride based materials and devices. We have published work in the following materials:
- hexagonal 2D BN. We are the leaders in Europe in hexagonal BN materials.
- BGaN, BAlN, BInGaN. We are the leaders in Europe in boron containing nitride semiconductors.
(Atomic force microscope image of hexagonal BN 2D material layer)
The III-N research team has pioneered lift-off technologies, which permit removal of device layers from substrates.
- h-BN sacrificial layer
- ZnO sacrificial layers
(Image of 2" LED wafer transferred to copper tape after lift-off from h-BN layer, LED structures worked well after transfer)
The III-N research team also has extensive expertise in nano-selective area growth, which allows for increased material quality.
Nano-Selective Area Growth
- GaN on GaN, ZnO, SiC
- NSAG through graphene masks
(Scanning electron microscope image of InGaN nanopyramids)