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  • UMI Researcher Suresh Sundaram honored with Industry-Sponsored Speaker Award at EWMOVPE Conference

    Suresh Sundaram received the industry-sponsored speaker award at the 18th European Workshop on Metal-Organic Vapour Phase Epitaxy, held June 16-19 in Vilnius, Lithuania.

    Breakthrough in MOCVD growth facilitates pick-and-place of optoelectronic nitride devices.  The discovery behind the growth technique is that boron nitride grows as a 2-D material on sapphire but in a highly disorganized form on silica. Subsequent gallium nitride based materials grow well on h-BN on sapphire, but not on amorphous BN on silica.  By prepatterning sapphire templates with silica then growing h-BN and then nitride based device structures, individual devices can be mechanically separated, eliminated needs for wafer dicing.  

  • Techniques for manipulation of 2D materials and the creation of new devices

    Exciting collaboration leads to fast, scalable processing of 2-D materials

    CNRS has highlighted recent collaboration between UMI-2958 researchers and several universities, leading to a major advance

    2-D materials are promising for the creation of ultra-cheap flexible electronics using special purpose optoelectronic semiconductors such as Gallium Nitride.  A recent collaboration has led to major advances in the ability to transfer of 2-D materials for device fabrication and in the understanding of a technique called "remote epitaxy", which allows the growth of arbitrary materials on 2-D layers. These layers can then be easily transfered to other supports or transfered and integrated with other semiconductor materials.  This breakthrough technique has the potential to make devices based on 2-D materials commercially viable. 

  • PhD Defense: Ekaterina SHIPILOVA

    Separations of signals originating from simultaneous seismic sources by greedy signal decomposition methods

    Ekaterina will be defending her PhD thesis. She was coadvised by UMI researchers Prof. Michel Barret and Prof. Matthieu Bloch

  • Boron Nitride Separation Process Could Facilitate Higher Efficiency Solar Cells

    A boron nitride separation layer is the basis for a new technique for producing photovoltaic cells.

    A team of semiconductor researchers based in France has used a boron nitride separation layer to grow indium gallium nitride (InGaN) solar cells that were then lifted off their original sapphire substrate and placed onto a glass substrate. 

  • Ayari Chosen for European MRS Young Scientist Award

    ECE Ph.D. student Taha Ayari won the Young Scientist Award at the 2018 European Materials Research Society Meeting, held June 18-22 in Strasbourg, France.

    ECE Ph.D. student Taha Ayari won the Young Scientist Award at the 2018 European Materials Research Society Meeting, held June 18-22 in Strasbourg, France.

  • The "Photonics and Terahertz Group" at Georgia Tech-Lorraine and GT-CNRS UMI 2958 has one of the "Top 100" Read Physics Papers in Scientific Reports

    The paper, "Global mapping of stratigraphy of an old-master painting using sparsity-based terahertz reflectometry," is the 6th most read paper in Scientific Reports.

    The paper, "Global mapping of stratigraphy of an old-master painting using sparsity-based terahertz reflectometry," is the 6th most read paper in Scientific Reports for 2017.